GaN-based materials and devices : growth, fabrication, characterization and performance /
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentratio...
| Другие авторы: | , |
|---|---|
| Формат: | Licensed eBooks |
| Язык: | английский |
| Опубликовано: |
River Edge, N.J. ; London :
World Scientific.,
©2004.
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| Серии: | Selected topics in electronics and systems ;
v. 33. |
| Online-ссылка: | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=129830 |