GaN-based materials and devices : growth, fabrication, characterization and performance /

The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentratio...

תיאור מלא

מידע ביבליוגרפי
מחברים אחרים: Shur, Michael, Davis, Robert F. (Robert Foster), 1942-
פורמט: Licensed eBooks
שפה:אנגלית
יצא לאור: River Edge, N.J. ; London : World Scientific., ©2004.
סדרה:Selected topics in electronics and systems ; v. 33.
גישה מקוונת:https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=129830