GaN-based materials and devices : growth, fabrication, characterization and performance /
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentratio...
| Altres autors: | , |
|---|---|
| Format: | Licensed eBooks |
| Idioma: | anglès |
| Publicat: |
River Edge, N.J. ; London :
World Scientific.,
©2004.
|
| Col·lecció: | Selected topics in electronics and systems ;
v. 33. |
| Accés en línia: | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=129830 |