GaN-based materials and devices : growth, fabrication, characterization and performance /
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentratio...
| Бусад зохиолчид: | , |
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| Формат: | Licensed eBooks |
| Хэл сонгох: | англи |
| Хэвлэсэн: |
River Edge, N.J. ; London :
World Scientific.,
©2004.
|
| Цуврал: | Selected topics in electronics and systems ;
v. 33. |
| Онлайн хандалт: | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=129830 |
| Тойм: | The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AIN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology. |
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| Биет тодорхойлолт: | 1 online resource (x, 284 pages) : illustrations |
| Номзүй: | Includes bibliographical references. |
| ISBN: | 9812562362 9789812562364 1281347620 9781281347626 9812388443 |