TY  - GEN
T1  - GaN-based materials and devices : growth, fabrication, characterization and performance
T2  - Selected topics in electronics and systems ;
A2  - Shur, Michael
A2  - Davis, Robert F. (Robert Foster), 1942-
LA  - English
PP  - River Edge, N.J. ; London
PB  - World Scientific.
YR  - 2004
UL  - https://ebooks.jgu.edu.in/Record/ebsco_acadsubs_ocm59550183
AB  - The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AIN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
OP  - 284
CN  - TK7871.15.G33 G36 2004eb
SN  - 9812562362
SN  - 9789812562364
SN  - 1281347620
SN  - 9781281347626
SN  - 9812388443
KW  - Gallium nitride.
KW  - Semiconductors : Materials.
KW  - Nitrure de gallium.
KW  - Semi-conducteurs : Matériaux.
KW  - TECHNOLOGY & ENGINEERING : Electronics : Solid State.
KW  - TECHNOLOGY & ENGINEERING : Electronics : Semiconductors.
KW  - Gallium nitride
KW  - Semiconductors : Materials
ER  -